- Varenummer
- VT6T11T2R
- Produsent
- ROHM Semiconductor
- kategorier
- Bipolar Transistors - BJT
- RoHS
- Datablad
- Beskrivelse
- Bipolar Transistors - BJT PNP+PNP -20VCEO-0.2A VMT6
VT6T11T2R
Bildene er kun til referanse
spesifikasjoner
- Produsent
- ROHM Semiconductor
- kategorier
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- - 20 V
- Collector- Emitter Voltage VCEO Max
- - 20 V
- Collector-Emitter Saturation Voltage
- - 120 mV
- Configuration
- Dual
- Emitter- Base Voltage VEBO
- - 5 V
- Gain Bandwidth Product fT
- 350 MHz
- Maximum DC Collector Current
- - 200 mA
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Package / Case
- VMT-6
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 150 mW
- Transistor Polarity
- PNP
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Siste omtaler
Received, Fast shipping, not checked yet
Roy Boustany
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Takes 8 days to Japan. Good!
Alex Fragkos
Thank You all fine, packed very well
Ulrich Bundke
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
VT6T11T2R Nyheter
03/14/2023
03/13/2023
03/09/2023
Relaterte nøkkelord for VT6T
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