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- IKB40N65EF5ATMA1
- Produsent
- Infineon Technologies
- kategorier
- IGBT Transistors
- RoHS
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- IGBT Transistors INDUSTRY 14
IKB40N65EF5ATMA1
Bildene er kun til referanse
spesifikasjoner
- Produsent
- Infineon Technologies
- kategorier
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.6 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 74 A
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-263-3
- Packaging
- Cut Tape, Reel
- Pd - Power Dissipation
- 250 W
- Series
- Trenchstop IGBT5
- Technology
- SI
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Siste omtaler
Received, Fast shipping, not checked yet
Roy Boustany
it is safe and sound all, thank you seller!
Arturo Madril
Thank You all fine, packed very well
Ulrich Bundke
Perfectly.
Sensofar Tech, SL
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
Kan hende du også liker
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Folk som ser på IKB40N65EF5ATMA1 kjøpte deretter
Infineon Technologies
Infineon Technologies
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IKB40N65EF5ATMA1 Nyheter
03/14/2023
03/13/2023
03/09/2023
Relaterte nøkkelord for IKB4
- IKB40N65EF5ATMA1 Integrated
- IKB40N65EF5ATMA1 RoHS
- IKB40N65EF5ATMA1 PDF Dataark
- IKB40N65EF5ATMA1 Datablad
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- IKB40N65EF5ATMA1 PDF
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