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- QH8K22TCR
- Produsent
- ROHM Semiconductor
- kategorier
- MOSFET
- RoHS
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- MOSFET 40V N-CHANNEL DUAL
QH8K22TCR
Bildene er kun til referanse
spesifikasjoner
- Produsent
- ROHM Semiconductor
- kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 6.5 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- TSMT-8
- Packaging
- Cut Tape, Reel
- Pd - Power Dissipation
- 2.5 W
- Qg - Gate Charge
- 2.6 nC
- Rds On - Drain-Source Resistance
- 46 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V
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Siste omtaler
packed pretty good, all is ok,-seller.
Julianah Yungkim
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
Long Service and Russia!
Alex Yu
Looks good
Michael Beck
QH8K22TCR Nyheter
03/14/2023
03/13/2023
03/09/2023
Relaterte nøkkelord for QH8K
- QH8K22TCR Integrated
- QH8K22TCR RoHS
- QH8K22TCR PDF Dataark
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