- Varenummer
- QH8MA3TCR
- Produsent
- ROHM Semiconductor
- kategorier
- MOSFET
- RoHS
- Datablad
- Beskrivelse
- MOSFET 30V N+P Ch MOSFET
QH8MA3TCR
Bildene er kun til referanse
spesifikasjoner
- Produsent
- ROHM Semiconductor
- kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 7 A, 5.5 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 2 Channel
- Package / Case
- TSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 2.5 W
- Qg - Gate Charge
- 7.2 nC, 10 nC
- Rds On - Drain-Source Resistance
- 22 mOhms, 37 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel, P-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V, 2.5 V
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Siste omtaler
thanks for resending, this item is good !
PLEMMENOS VAGELIS
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Pat Davis
Everything is excellent! recommend this seller!
Stoyan Chaykov
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Great product. Arrived ahead of time. Thank you
Alexey Petrov
QH8MA3TCR Nyheter
03/14/2023
03/13/2023
03/09/2023
Relaterte nøkkelord for QH8M
- QH8MA3TCR Integrated
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