- Varenummer
- RQ3E160ADTB
- Produsent
- ROHM Semiconductor
- kategorier
- MOSFET
- RoHS
- Datablad
- Beskrivelse
- MOSFET Nch 30V 16A Middle Power MOSFET
RQ3E160ADTB
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spesifikasjoner
- Produsent
- ROHM Semiconductor
- kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 16 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 2 W
- Qg - Gate Charge
- 51 nC
- Rds On - Drain-Source Resistance
- 3.5 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V
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Siste omtaler
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
The goods are OK, thank you dealers.
CHARLES SANTOS
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
Works. Recommend
Rajiv
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RQ3E160ADTB Nyheter
03/14/2023
03/13/2023
03/09/2023
Relaterte nøkkelord for RQ3E
- RQ3E160ADTB Integrated
- RQ3E160ADTB RoHS
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