Varenummer UJ4C075018K4S Produsent UnitedSiC kategorier MOSFET RoHS Datablad UJ4C075018K4S Beskrivelse MOSFET 750V/18mOhm, N-Off SiC CASCODE, G4, TO-247-4L, REDUCED RTH
Produsent UnitedSiC kategorier MOSFET Channel Mode Enhancement Id - Continuous Drain Current 81 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-4 Packaging Tube Pd - Power Dissipation 385 W Qg - Gate Charge 37.8 nC Rds On - Drain-Source Resistance 23 mOhms Technology SiC Tradename SiC FET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 750 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 6 V