- Varenummer
- G3R20MT17N
- Produsent
- GeneSiC Semiconductor
- kategorier
- MOSFET
- RoHS
- Datablad
- Beskrivelse
- MOSFET 1700V 20mO SOT-227 G3R SiC MOSFET
G3R20MT17N
Bildene er kun til referanse
spesifikasjoner
- Produsent
- GeneSiC Semiconductor
- kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 92 A
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- SOT-227
- Packaging
- Tube
- Pd - Power Dissipation
- 476 W
- Qg - Gate Charge
- 256 nC
- Rds On - Drain-Source Resistance
- 20 mOhms
- Technology
- SiC
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.7 kV
- Vgs - Gate-Source Voltage
- - 5 V, + 15 V
- Vgs th - Gate-Source Threshold Voltage
- 2.7 V
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Siste omtaler
Very good!
Manuel MAde
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Pat Davis
Everything is excellent! recommend this seller!
Stoyan Chaykov
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Works. Recommend
Rajiv
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Folk som ser på G3R20MT17N kjøpte deretter
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G3R20MT17N Nyheter
03/14/2023
03/13/2023
03/09/2023
Relaterte nøkkelord for G3R2
- G3R20MT17N Integrated
- G3R20MT17N RoHS
- G3R20MT17N PDF Dataark
- G3R20MT17N Datablad
- G3R20MT17N Del
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