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- QH8KA2TCR
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- ROHM Semiconductor
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- MOSFET
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- MOSFET 30V Nch+Nch Si MOSFET
QH8KA2TCR
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spesifikasjoner
- Produsent
- ROHM Semiconductor
- kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 4.5 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 2 Channel
- Package / Case
- TSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 1.5 W
- Qg - Gate Charge
- 8.4 nC
- Rds On - Drain-Source Resistance
- 25 mOhms, 25 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V
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Siste omtaler
goods very well received very good quality
Fabrice Cubaynes
all exactly and work. радиолюбителя useful set to, thank you)
Mahmoud Shendy
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
QH8KA2TCR Nyheter
03/14/2023
03/13/2023
03/09/2023
Relaterte nøkkelord for QH8K
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