- Varenummer
- QH8KC5TCR
- Produsent
- ROHM Semiconductor
- kategorier
- MOSFET
- RoHS
- Datablad
- Beskrivelse
- MOSFET 60V N&N-CHANNEL
QH8KC5TCR
Bildene er kun til referanse
spesifikasjoner
- Produsent
- ROHM Semiconductor
- kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 3 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 2 Channel
- Package / Case
- TSMT-8
- Packaging
- Cut Tape, Reel
- Pd - Power Dissipation
- 1.5 W
- Qg - Gate Charge
- 3.1 nC
- Rds On - Drain-Source Resistance
- 90 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
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Siste omtaler
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Paolo Giazzi
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Works. Find the price of this product is very good
Maxim Krasnov
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
QH8KC5TCR Nyheter
03/14/2023
03/13/2023
03/09/2023
Relaterte nøkkelord for QH8K
- QH8KC5TCR Integrated
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