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- QH8KB6TCR
- Produsent
- ROHM Semiconductor
- kategorier
- MOSFET
- RoHS
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- Beskrivelse
- MOSFET 40V N&N-CHANNEL
QH8KB6TCR
Bildene er kun til referanse
spesifikasjoner
- Produsent
- ROHM Semiconductor
- kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 8 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 2 Channel
- Package / Case
- TSMT-8
- Packaging
- Cut Tape, Reel
- Pd - Power Dissipation
- 1.5 W
- Qg - Gate Charge
- 10.6 nC
- Rds On - Drain-Source Resistance
- 17.7 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
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Siste omtaler
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
the photo in comparison with cheap. Delivery fast
Kaido Kevvai
Long Service and Russia!
Alex Yu
The timer is running. 10 PCS. Packed properly.
Karina Erdmann
QH8KB6TCR Nyheter
03/14/2023
03/13/2023
03/09/2023
Relaterte nøkkelord for QH8K
- QH8KB6TCR Integrated
- QH8KB6TCR RoHS
- QH8KB6TCR PDF Dataark
- QH8KB6TCR Datablad
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